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MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices

 
: Paraskevopoulos, A.; Kunzel, H.; Bottcher, J.; Urmann, G.; Hensel, H.J.; Bozbek, A.

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IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
International Conference on Indium Phosphide and Related Materials, IPRM, 1997. Conference proceedings : 11 - 15 May 1997, Tara Hyanns Hotel and Resort Hyannis, Cape Cod, Massachusetts, USA
Piscataway, NJ: IEEE, 1997
ISBN: 0-7803-3898-7
ISBN: 0-7803-3899-5
ISBN: 0-7803-3900-2
S.66-69
International Conference on Indium Phosphide and Related Materials (IPRM) <9, 1997, Hyannis/Mass.>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
diffraction gratings; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; optical fabrication; semiconductor growth; mbe regrowth; patterned surface; optoelectronic device; solid source molecular beam epitaxy; dry etching; wet etching; corrugated quaternary surface; dfb grating; planarization; mesa structure; butt-coupling integration; inp

Abstract
High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP source. Dry- as well as wet-etched corrugated quaternary surfaces (DFB-gratings) were successfully regrown with InP, fully planarized final surfaces were obtained in each case. Finally, InP regrowth on mesa structures demonstrates favourable conditions for butt-coupling integration schemes.

: http://publica.fraunhofer.de/dokumente/N-13225.html