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Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques

: Rommel, M.; Spoldi, G.; Yanev, V.; Beuer, S.; Amon, B.; Jambreck, J.; Petersen, S.; Bauer, A.J.; Frey, L.

Preprint urn:nbn:de:0011-n-1321595 (11 MByte PDF)
MD5 Fingerprint: cf4b9ed1b232ad82089683439ca9100d
Erstellt am: 12.11.2011

Journal of vacuum science and technology B. Microelectronics and nanometer structures 28 (2010), Nr.3, S.595-607
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
FIB; SPM; focused ion beam; scanning probe microscopy; FIB damage; SSRM; SCM

Scanning probe microscopy techniques and, in particular, scanning spreading resistance microscopy (SSRM) were used for a detailed characterization of focused ion beam (FIB) induced damage in the surrounding of purposely irradiated areas on silicon. It is shown that the damaged area detected using these techniques extends up to several micrometers around the irradiated structures. The influence of the key FIB processing parameters on the FIB induced damage was examined. Parameters which were taken into account are the ion dose (from 1012 to 1018 cm−2), the milled structure size (circle diameters from 0.25 to 10 µm), the beam energy (from 10 to 30 keV), and the beam current (from 1.5 to 280 pA). Moreover, the influence of the SSRM settings on the measurement results was investigate d. Settings which were considered are the bias voltage and the force applied to the tip during the SSRM analysis. High resolution transmission electron microscopy and secondary ion mass spectroscopy analyses were performed to validate the SSRM results. Scattering between Ga ions and residual gas particles in the vacuum chamber of the FIB tool is identified as the main reason for the observed damaged area.