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MBE regrowth on AlGaInAs DFB gratings using in-situ hydrogen radical cleaning

 

Journal of Crystal Growth 175-176, pt.1 (1997), S.411-415
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <9, 1996, Malibu/Calif.>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; iii-v semiconductors; indium compounds; interface structure; molecular beam epitaxial growth; optical fabrication; photoluminescence; reflection high energy electron diffraction; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; surface cleaning; surface structure; mbe regrowth; gratings; in situ radical cleaning; etched gratings; smooth surfaces; planar surfaces; grating topography; surface stabilisation; sem; 440 c; 500 c; 300 k; InP; AlGaInAs

Abstract
MBE regrowth on AlGaInAs surfaces structured with DFB gratings has been studied. As a crucial process, in-situ hydrogen radical processing established as a basic in-situ surface cleaning technique has been used, and appropriate process parameters have been evaluated. For an Al-content of xAl=0.16, adequate for waveguide layers in 1.55 mu m laser structures, a short processing time of 5 min already leads to high-quality regrowth. Regrowth of InP on wet and dry etched AlGaInAs DFB gratings results in smooth and planar surfaces, with the planarisation of the growth front occurring within a thickness of 200 nm. The topography of the DFB gratings is neither affected by the hydrogen radical processing and the surface stabilisation procedure before regrowth nor by the MBE regrowth itself.

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