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Investigation of Be-distribution profiles in MBE-grown GaInAs for optimization of HBT base structures

: Passenberg, W.; Harde, P.; Paraskevopoulos, A.

Shur, M.S.; Suris, R.A.:
Compound Semiconductors 1996. Proceedings of the Twenty-Third International Symposium on Compound Semiconductors
Bristol: IOP Publishing, 1997 (Institute of Physics - Conference Series 155)
ISBN: 0-7503-0452-9
International Symposium on Compound Semiconductors <23, 1996, St. Petersburg>
Fraunhofer HHI ()
beryllium; diffusion; doping profiles; gallium arsenide; heterojunction bipolar transistors; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; mbe-grown GaInAs; delta doping; Be acceptor distribution; diffusion time; redistribution dynamics; substrate temperature; doping profile; GaInAs/AlInAs HBT base; GaInAs:Be; GaInAs-AlInAs

The distribution of Be acceptors during MBE-growth was investigated by implementing thin doped layers in otherwise undoped GaInAs. In this way, the diffusion time was varied gradually and the redistribution dynamics could be observed in dependence of substrate temperature and dopant dose. Reduction of the nominal thickness of the doped layer down to atomic planes with maintaining the total amount of Be-dopants constant led to an unexpected acceleration of the doping-profile broadening which was found of bring concentration dependent. Based on these results, conclusions with respect to the base doping in GaInAs/AlInAs HBTs could be drawn.