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Harmonic termination of AlGaN/GaN/(Al)GaN single- and double-heterojunction HEMTs

 
: Kühn, J.; Waltereit, P.; Raay, F. van; Aidam, R.; Quay, R.; Ambacher, O.; Thumm, M.

Institute of Electrical and Electronics Engineers -IEEE-:
German Microwave Conference, GeMIC 2010 : Berlin, Germany, 15 - 17 March 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-4933-0
ISBN: 978-3-9812-6681-8
S.122-125
German Microwave Conference (GeMiC) <5, 2010, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
This paper gives a systematic comparison of inputand output-second-harmonic termination in X-frequency-band MMICs (8-12 GHz) based on advanced single- and doubleheterojunction AlGaN/GaN/(Al)GaN high electron mobility transistors (HEMTs) on SiC substrates. High-efficiency designstrategies are key to make use of the outstanding power capability in group-III-nitride MMICs. The study deals with the bandwidth trade-offs associated with reaching very high PAE-values beyond 55% at 10GHz in cw-operation to a 50Ohm-load.

: http://publica.fraunhofer.de/dokumente/N-131663.html