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Stress changes in silicon nitride thin films on thermal cycling and deconvolution of seperate contributions

: Sah, R.E.; Baumann, H.

Sah, R.E.; Deen, M.J.; Zhang, J.F.; Yota, J.; Toriumi, A.:
Silicon nitride, silicon dioxide, and emerging dielectrics : Proceedings of the Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics, Part of the 215th Meeting of the Electrochemical Society; San Francisco, CA, May 24-29, 2009
New Jersey: Electrochemical Society, 2009 (ECS transactions 19)
ISBN: 978-1-56677-710-0
ISSN: 1938-5862
International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics <10, 2009, San Francisco/Calif.>
Fraunhofer IAF ()

A correlation between stress in amorphous silicon nitride films and their composition has been established. This has led to the deposition of low-stressed films at low temperatures. The density of the films calculated from the results of Rutherford Backscattering Spectroscopy and Nuclear Reaction Analysis techniques is high, around 2.4 g/cm3, indicating a dense network. The films exhibit relatively high coefficient of thermal expansion, around 3.2 ppm/°C, indicating a fairly short-range order in the film. Furthermore, a reversible thermally induced stress, i. e., a negligible stress hysteresis upon thermal cycling between room temperature and 400°C has been observed in the film. From the stress response of the films to the thermal cycling separate contributions from the thermal and athermal components to the net room temperature stress have been deconvoluted.