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LP-MOVPE growth of laser structures using nitrogen carrier gas

: Roehle, H.; Schroeter-Janssen, H.

EW MOVPE VII, 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques 1997. Workshop booklet : Berlin, June 8 - 11, 1997
Berlin, 1997
S.D9 4
European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques (EW MOVPE) <7, 1997, Berlin>
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; quantum well lasers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; lp-movpe growth; laser structures; n2 carrier gas; reaction-kinetic aspects; high quality movpe growth; InGaAsP/lnp; selective-area epitaxy; quantum-well structures; InGaAsP-InP; n2

The replacement of the commonly used hydrogen by nitrogen as the carrier gas in MOVPE has been discussed from time to time, mainly with respect to safety considerations, but also to reaction-kinetic aspects. Recently, Hardtdegen et al. reported the successful achievement of high quality MOVPE growth of InP and InGaAs under N2 carrier gas. This progress has become possible by exploiting the 'getter column' technology which recently enabled the very efficient purification of nitrogen. We previously reported the extension of this process to the quaternary material system InGaAsP/lnP and to the growth of quantum-well structures as well as selective-area epitaxy. We showed that with only minor changes of the MOVPE growth system a remarkable improvement with respect to both layer-thickness and composition uniformity is achievable, which we consider as the primary advantage of using nitrogen as carrier gas. Both effects are superimposed in the case of Plmax uniformity of QW structures. No detrimental effect on other material properties was observed.