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Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices



Applied Physics Letters 72 (1998), Nr.23, S.3050-2
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer HHI ()
chemical beam epitaxial growth; electrical resistivity; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; integrated optoelectronics; iron; optical losses; optical waveguides; secondary ion mass spectra; semiconductor doping; semiconductor growth; metalorganic molecular beam epitaxial growth; semi-insulating GaInAsP:fe optical waveguides; mombe; integrated photonic devices; iron doping; elemental source material; effusion cell; semi-insulating optical waveguides; secondary ion mass spectroscopy; incorporation behaviour; resistivities; doping levels; GaInAsP/InP waveguide structures; 1.05 mum; 1e9 ohmcm; 485 c; 5e7 ohmcm; GaInAsP:fe-InP

Iron doping of InP and GaInAsP( lambda g=1.05 mu m) layers grown by metalorganic molecular beam epitaxy was studied using elemental source material in combination with a conventional effusion cell. This study was aimed at the creation of semi-insulating optical waveguides under growth conditions compatible with selective area growth. Secondary ion mass spectroscopy measurements revealed a reproducible and homogeneous incorporation behavior of the iron dopant in the materials investigated. Resistivities in excess of 109 Omega cm were obtained for both compositions at medium doping levels. GaInAsP/InP waveguide structures grown at 485 degrees C-the minimum temperature necessary for selective deposition-exhibited averaged resistivities of 5*107 Omega cm in combination with optical losses of 2.5+or-0.5 dB/cm.