Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices

: Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.

	Applied Physics Letters 72 (1998), Nr.23, S.3050-2 ISSN: 0003-6951 ISSN: 1077-3118

	Englisch
	Zeitschriftenaufsatz
	Fraunhofer HHI ()
	chemical beam epitaxial growth; electrical resistivity; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; integrated optoelectronics; iron; optical losses; optical waveguides; secondary ion mass spectra; semiconductor doping; semiconductor growth; metalorganic molecular beam epitaxial growth; semi-insulating GaInAsP:fe optical waveguides; mombe; integrated photonic devices; iron doping; elemental source material; effusion cell; semi-insulating optical waveguides; secondary ion mass spectroscopy; incorporation behaviour; resistivities; doping levels; GaInAsP/InP waveguide structures; 1.05 mum; 1e9 ohmcm; 485 c; 5e7 ohmcm; GaInAsP:fe-InP

Abstract
Iron doping of InP and GaInAsP( lambda g=1.05 mu m) layers grown by metalorganic molecular beam epitaxy was studied using elemental source material in combination with a conventional effusion cell. This study was aimed at the creation of semi-insulating optical waveguides under growth conditions compatible with selective area growth. Secondary ion mass spectroscopy measurements revealed a reproducible and homogeneous incorporation behavior of the iron dopant in the materials investigated. Resistivities in excess of 109 Omega cm were obtained for both compositions at medium doping levels. GaInAsP/InP waveguide structures grown at 485 degrees C-the minimum temperature necessary for selective deposition-exhibited averaged resistivities of 5*107 Omega cm in combination with optical losses of 2.5+or-0.5 dB/cm.

: http://publica.fraunhofer.de/dokumente/N-13133.html