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InGaAs photodetector with integrated biasing network for mm-wave applications

: Trommer, D.; Umbach, A.; Unterborsch, G.

DOI: 10.1109/ICIPRM.1998.712456

	Tenth International Conference on Indium Phosphide and Related Materials 1998. Conference proceedings Piscataway, NJ: IEEE, 1998 ISBN: 0-7803-4220-8 S.276
	International Conference on Indium Phosphide and Related Materials (IPRM) <10, 1998, Tsukuba>

	Englisch
	Konferenzbeitrag
	Fraunhofer HHI ()
	gallium arsenide; iii-v semiconductors; indium compounds; integrated optoelectronics; microwave links; microwave photonics; millimetre wave detectors; mobile communication; optical planar waveguides; optical receivers; p-i-n photodiodes; photodetectors; waveguide integrated photodetector; integrated biasing network; external responsivity; bandwidth; output standing wave ratio; linear operation; 70 GHz; 64 GHz; InGaAs

Abstract
xi A waveguide integrated photodetector with an integrated biasing network is presented. The external responsivity amounts to 0.3 A/W while the bandwidth is 70 GHz. The integration of a matching resistor significantly reduces the output standing wave ratio. Application of the photodetector in a mm-wave system experiment is demonstrated. Linear operation at 64 GHz up to power levels of +10 dBm was achieved.

: http://publica.fraunhofer.de/dokumente/N-13072.html