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A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure

 
: Mörl, L.; Bornholdt, C.; Hoffmann, D.; Matzen, K.; Mekonnen, G.G.; Reier, F.W.

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Tenth International Conference on Indium Phosphide and Related Materials 1998. Conference proceedings
Piscataway, NJ: IEEE, 1998
ISBN: 0-7803-4220-8
S.403-406
International Conference on Indium Phosphide and Related Materials (IPRM) <10, 1998, Tsukuba>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
aluminium compounds; demultiplexing equipment; electro-optical modulation; electro-optical switches; gallium arsenide; iii-v semiconductors; indium compounds; mach-zehnder interferometers; optical communication equipment; optical fibre communication; semiconductor quantum wells; semiconductor superlattices; tunnelling; travelling wave electrode mach-zehnder demultiplexer; strain compensated GaInAs/AlInAs tunnelling barrier mqw structure; high bandwidth; polarization independence; travelling wave electrode; tunnelling barrier qw; switching element; mach-zehnder interferometer; waveguide network; time division demultiplexer; modulator; european acts highway project; GaInAs-AlInAs

Abstract
In this work high bandwidth and polarization independence were tackled by employing a travelling wave electrode and a tunnelling barrier QW (TBQW) structure, respectively, as the basic guidelines in the design of the switching element, a Mach-Zehnder interferometer (MZI). With a small variation of the waveguide network connecting the MZI either a time division demultiplexer (DEMUX) or a modulator were fabricated. The development of the DEMUX is part of the European ACTS HIGHWAY project.

: http://publica.fraunhofer.de/dokumente/N-13069.html