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2000
Conference Paper
Titel
"On-wafer" surface implanted high power, picosecond pulse InGaAs/InP ( lambda -1.53-1.55 mu m) laser diodes
Abstract
A cost-effective, on-wafer surface implantation technique was applied for the fabrication of short pulse InGaAsP/InP laser diodes. Based on thick electroplated Au masks, local ion implantation could be performed, allowing a versatile design of the absorber region. Picosecond pulses with typical FWHM of 20 ps and optical power exceeding 1.8 W were obtained. The measured emission spectrum in the pulsed regime demonstrates the potential of such devices to pump commercially available EDFA's.
Tags
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gallium arsenide
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gallium compounds
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iii-v semiconductors
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indium compounds
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ion implantation
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laser beams
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optical fabrication
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optical pulse generation
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semiconductor lasers
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on-wafer surface implanted high power picosecond pulse laser diodes
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cost-effective on-wafer surface implantation technique
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fabrication
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InGaAsP/InP laser diodes
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thick electroplated au masks
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local ion implantation
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versatile design
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absorber region
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picosecond pulses
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fwhm
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optical power
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emission spectrum
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pulsed regime
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er-doped fibre amplifier
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commercially available er-doped fibre amplifier
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18 w
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20 ps
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1.53 to 1.55 mum
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InGaAsP-InP