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"On-wafer" surface implanted high power, picosecond pulse InGaAs/InP ( lambda -1.53-1.55 mu m) laser diodes

: Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.


IEEE Electron Devices Society:
International Conference on Indium Phosphide and Related Materials 2000. Conference proceedings : 14 - 18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA
Piscataway, NJ: IEEE, 2000
ISBN: 0-7803-6320-5
ISBN: 0-7803-6321-3
ISBN: 0-7803-6322-1
International Conference on Indium Phosphide and Related Materials (IPRM) <12, 2000, Williamsburg/Va.>
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; ion implantation; laser beams; optical fabrication; optical pulse generation; semiconductor lasers; on-wafer surface implanted high power picosecond pulse laser diodes; cost-effective on-wafer surface implantation technique; fabrication; InGaAsP/InP laser diodes; thick electroplated au masks; local ion implantation; versatile design; absorber region; picosecond pulses; fwhm; optical power; emission spectrum; pulsed regime; er-doped fibre amplifier; commercially available er-doped fibre amplifier; 18 w; 20 ps; 1.53 to 1.55 mum; InGaAsP-InP

A cost-effective, on-wafer surface implantation technique was applied for the fabrication of short pulse InGaAsP/InP laser diodes. Based on thick electroplated Au masks, local ion implantation could be performed, allowing a versatile design of the absorber region. Picosecond pulses with typical FWHM of 20 ps and optical power exceeding 1.8 W were obtained. The measured emission spectrum in the pulsed regime demonstrates the potential of such devices to pump commercially available EDFA's.