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Impact of a conducting interface layer on the characteristics of integrated InP photoreceivers

 
: Schramm, C.; Mekonnen, G.G.; Bach, H.-G.; Unterborsch, G.; Schlaak, W.; Ebert, W.; Wolfram, P.

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IEEE Electron Devices Society:
International Conference on Indium Phosphide and Related Materials 2000. Conference proceedings : 14 - 18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA
Piscataway, NJ: IEEE, 2000
ISBN: 0-7803-6320-5
ISBN: 0-7803-6321-3
ISBN: 0-7803-6322-1
S.408-411
International Conference on Indium Phosphide and Related Materials (IPRM) <12, 2000, Williamsburg/Va.>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
high-speed optical techniques; iii-v semiconductors; indium compounds; integrated optoelectronics; optical receivers; photodetectors; photodiodes; conducting interface layer; integrated InP photoreceivers; high-speed photoreceivers; monolithic integration; waveguide layer stack; interface conduction; photoreceiver elements; high-frequency gain; integrated amplifiers; fabrication process; epitaxial growth; waveguide; photodiode; amplifier; inp

Abstract
High-speed photoreceivers are important components for future high-bit rate communication systems. The use of a monolithical integration of waveguide, photodiode and amplifier avoids loss-making interconnections and enables high-speed performance, small size and cost-saving high-frequency packaging. Particularly with respect to a commercial use, the degree of reproducibility and reliability has to be very high. The elimination of process uncertainties is indispensable. Hence, in our photoreceiver development, e.g. the semi-insulating behavior of the substrate and the waveguide layer stack is verified as a matter of routine. By these measurements an occasionally occurring interface conduction was detected. This affects adversely the device insulation of the photoreceiver elements. On the performance side especially the high-frequency gain of the integrated amplifiers is reduced. To stabilize the fabrication process, a new treatment prior to epitaxial growth was developed to ensure a complete and reliable semi-insulating behaviour.

: http://publica.fraunhofer.de/dokumente/N-12956.html