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Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas

: Schroeter-Janssen, H.; Roehle, H.; Franke, D.; Bochnia, R.; Harde, P.; Grote, N.


Journal of Crystal Growth 221 (2000), Nr.1-4, S.70-74
ISSN: 0022-0248
International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) <10, 2000, Sapporo>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
diffusion; gallium arsenide; gallium compounds; hole density; iii-v semiconductors; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor heterojunctions; zinc; movpe-based zn diffusion; InGaAsP/inp; h2 carrier gas; n2 carrier gas; indiffusion; movpe-based diffusion process; diffusion coefficients; maximum hole concentration; doping effect; lateral diffusion uniformity; InGaAsP:zn-InP

The indiffusion of Zn into InGaAsP layers was studied using a MOVPE-based diffusion process. Hydrogen and nitrogen were alternatively employed as carrier gas to compare their effect on the diffusion behaviour. Using nitrogen, larger diffusion coefficients of Zn were obtained under comparable conditions. Whereas in InGaAs, maximum hole concentration levels of >1*1020 cm-3 were obtained for both N2 and H2, i.e, a factor of 3-4 higher than achievable with MOVPE doping, there proved to be no enhanced doping effect in InP. As to the lateral diffusion uniformity superior results were obtained with nitrogen.