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High-speed, high-responsivity 1.55 mu m photodetector on InP

 
: Umbach, A.; Trommer, D.; Steingrüber, R.; Seeger, A.; Ebert, W.; Unterborsch, G.

Verband der Elektrotechnik, Elektronik, Informationstechnik -VDE-:
MICRO.tec 2000. VDE World Microtechnologies Congress: Applications - Trends - Visions. Proceedings. Vol.1 : VDE World Microtechnologies Congress, September 25 - 27, 2000, Expo 2000, Hannover, Germany
Berlin: VDE-Verlag, 2000
ISBN: 3-8007-2579-7
S.85-89
World Microtechnologies Congress (MICROTEC) <2000, Hannover>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
indium compounds; integrated optoelectronics; optical communication equipment; optical waveguides; p-i-n photodiodes; photodetectors; high-speed photodetector; high-responsivity photodetector; waveguide-integrated pin diodes; p-i-n diodes; InP substrate; waveguide-integrated photodetectors; monolithic integration; spot size transformer; fiber alignment tolerances; linear power behaviour; 40 Gbit/s; 60 GHz; 50 GHz; 1.55 micron; InP

Abstract
40 Gbit/s photodetectors require high bandwidth at high power levels, as supplied by waveguide-integrated p-i-n diodes on InP. Waveguide-integrated photodetectors on InP exhibit a high cutoff frequency above 60 GHz. By monolithic integration of a spot size transformer, a responsivity of 0.7 A/W is achieved and the fiber alignment tolerances are increased by one order of magnitude. Linear power behaviour up to +12 dBm at 50 GHz and maximum output voltage swings of 1 V are demonstrated.

: http://publica.fraunhofer.de/dokumente/N-12910.html