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2000
Conference Paper
Titel
High-speed, high-responsivity 1.55 mu m photodetector on InP
Abstract
40 Gbit/s photodetectors require high bandwidth at high power levels, as supplied by waveguide-integrated p-i-n diodes on InP. Waveguide-integrated photodetectors on InP exhibit a high cutoff frequency above 60 GHz. By monolithic integration of a spot size transformer, a responsivity of 0.7 A/W is achieved and the fiber alignment tolerances are increased by one order of magnitude. Linear power behaviour up to +12 dBm at 50 GHz and maximum output voltage swings of 1 V are demonstrated.
Language
English
Tags
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indium compounds
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integrated optoelectronics
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optical communication equipment
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optical waveguides
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p-i-n photodiodes
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photodetectors
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high-speed photodetector
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high-responsivity photodetector
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waveguide-integrated pin diodes
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p-i-n diodes
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InP substrate
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waveguide-integrated photodetectors
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monolithic integration
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spot size transformer
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fiber alignment tolerances
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linear power behaviour
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40 Gbit/s
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60 GHz
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50 GHz
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1.55 micron
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InP