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1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots

: Kovshb, A.R.; Maleev, N.A.; Sakharov, A.V.; Moeller, C.; Krestnikov, I.L.; Kovsh, A.R.; Mikhrin, S.S.; Zhukov, A.E.; Ustinov, V.M.; Passenberg, W.; Pawlowski, E.; Kuenzel, H.; Tsatsul'nikov, A.F.; Ledentsov, N.N.; Bimberg, D.; Alferov, Z.I.


Journal of Crystal Growth 227-228 (2001), S.1146-1150
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <11, 2000, Beijing>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer HHI ()
electroluminescence; gallium arsenide; iii-v semiconductors; indium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; GaAs-based microcavity led; inas/GaInAs quantum dots; molecular beam epitaxy growth; selforganized quantum dots; emission wavelength; optical emission properties; electroluminescence spectra; mbe layers; 1260 to 1340 nm; 1310 to 1325 nm; 1300 nm; GaAs; inas-GaInAs

Basic development steps towards the molecular beam epitaxy growth of AlGaAs/GaAs microcavity structures are presented, which contain self-organized InAs/GaInAs quantum dots as the active medium. The emission wavelength of these structures can be controllably adjusted within 1260-1340 nm by variation of the deposition parameters of the epitaxial layers without the use of any real-time monitoring technique. Based on quantum dot active material with optimized optical emission properties and accurately calibrated layer thicknesses microcavity light emitting diodes were fabricated. 40 mu m diameter devices, as characterized on-wafer, showed narrow electroluminescence spectra (FWHM: 13-26 nm) centered at 1310-1325 nm and narrow circular beam widths of FWHM<10 degrees were obtained on mounted devices.