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Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers

Elektrische Rasterkraftmikroskopie-Techniken für die detaillierte Charakterisierung von Schichten hoher Dielektrizitätskonstante
: Rommel, M.; Yanev, V.; Paskaleva, A.; Erlbacher, T.; Lemberger, M.; Bauer, A.J.; Frey, L.

Preprint urn:nbn:de:0011-n-1289482 (1.1 MByte PDF)
MD5 Fingerprint: 07c4061c4bfa5b03f8936116d0cfac90
© The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).
Erstellt am: 7.7.2010

Misra, D. ; Electrochemical Society -ECS-, Dielectric Science and Technology Division:
Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing : Papers presented at the Fourth International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing held on April 26 - 28, 2010 in Vancouver, Canada as part of the 217th meeting of the Electrochemical Society
Pennington, NJ: ECS, 2010 (ECS transactions 28.2010, Nr.2)
ISBN: 978-1-566-77792-6
ISBN: 978-1-607-68142-7
ISSN: 1938-5862
Electrochemical Society (Meeting) <217, 2010, Vancouver>
International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing <4, 2010, Vancouver>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
high-k; SPM; AFM; cAFM; TUNA; high-k dielectric; nano scale; scanning probe microscopy

The use of scanning probe microscopy (SPM) techniques for the electrical characterization of high-k dielectric layers is reviewed, focusing on conductive atomic force microscopy (cAFM) and scanning capacitance microscopy (SCM). It is demonstrated exemplarily for ZrO2 high-k layer stacks that cAFM enables a detailed analysis of the morphological and electrical layer characteristics. Film morphologies can be determined even for surfaces where topography mapping can not detect distinct surface roughness like grain structures. For as-deposited amorphous layers, the current distribution is random whereas increased leakage currents at grain boundaries can be observed for nano-crystalline samples. The dominant current mechanisms through the layers can be determined from current voltage curves at distinct local points. Comparison with conventional techniques proofs the findings by cAFM. The quantitative interpretation of SCM measurement results often suffers from parasitic capacitances and light induced effects. Local thickness variation of dielectrics, however, can be detected very sensitively.