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2000
Conference Paper
Titel
Integratable high-power small-linewidth lambda /4 phase-shifted 1.55 mu m InGaAsP-InP-ridge-waveguide DFB-lasers
Abstract
The influences of the spectral position of the DFB-grating on the output power behaviour of AR/AR-coated lambda /4 phase-shifted 1.55 mu m InGaAsP-InP-ridge-waveguide DFB-lasers are investigated experimentally. Optimised DFB-lasers show CW output powers of more than 50mW at 20 degrees C, more than 10mW at 90 degrees C and linewidths of less than 200kHz.
Language
English
Tags
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distributed feedback lasers
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gallium arsenide
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gallium compounds
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iii-v semiconductors
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indium compounds
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laser tuning
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semiconductor lasers
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waveguide lasers
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ridge-waveguide dfb-lasers
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dfb-grating
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output power
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lambda /4 phase-shifted device
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small-linewidth lasers
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cw output
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threshold current
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detuning
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1.55 micron
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50 mw
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10 mw
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20 c
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90 c
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InGaAsP-InP