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Integratable high-power small-linewidth lambda /4 phase-shifted 1.55 mu m InGaAsP-InP-ridge-waveguide DFB-lasers

 
: Mohrle, M.; Sigmund, A.; Kreissl, J.; Reier, F.; Steingrüber, R.; Rehbein, W.; Roehle, H.

Ploog, K.H.; Tränkle, G.; Weimann, G.:
Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors : Berlin, Germany, 22 - 26 August 1999
Bristol: IOP Publishing, 2000 (Institute of Physics - Conference Series 166)
ISBN: 0-7503-0704-8
S.391-394
International Symposium on Compound Semiconductors (ISCS) <26, 1999, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
distributed feedback lasers; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; laser tuning; semiconductor lasers; waveguide lasers; ridge-waveguide dfb-lasers; dfb-grating; output power; lambda /4 phase-shifted device; small-linewidth lasers; cw output; threshold current; detuning; 1.55 micron; 50 mw; 10 mw; 20 c; 90 c; InGaAsP-InP

Abstract
The influences of the spectral position of the DFB-grating on the output power behaviour of AR/AR-coated lambda /4 phase-shifted 1.55 mu m InGaAsP-InP-ridge-waveguide DFB-lasers are investigated experimentally. Optimised DFB-lasers show CW output powers of more than 50mW at 20 degrees C, more than 10mW at 90 degrees C and linewidths of less than 200kHz.

: http://publica.fraunhofer.de/dokumente/N-12838.html