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Optimizing Fe-doped semi-insulating optical waveguide layers: Detection of interface layer conduction

 
: Bach, H.-G.; Ebert, W.; Umbach, A.; Schramm, C.; Hubsch, R.; Seeger, A.

Ploog, K.H.; Tränkle, G.; Weimann, G.:
Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors : Berlin, Germany, 22 - 26 August 1999
Bristol: IOP Publishing, 2000 (Institute of Physics - Conference Series 166)
ISBN: 0-7503-0704-8
S.415-418
International Symposium on Compound Semiconductors (ISCS) <26, 1999, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
buried layers; electrical conductivity; gallium arsenide; iii-v semiconductors; indium compounds; iron; optical waveguides; vapour phase epitaxial growth; interface layer conduction; movpe growth; fe-doped semi-insulating GaInAsP/InP optical waveguide layer stack; admittance spectroscopy; frequency-resolved circular current distribution; residual buried interface sheet conductivity; bulk properties; GaInAsP-InP:fe

Abstract
MOVPE-grown Fe-doped semi-insulating GaInAsP/InP optical waveguide layer stacks are characterized by admittance spectroscopy. A new analysis is presented, based on frequency-resolved circular current distribution calculation, which investigates residual buried interface sheet conductivity as well as bulk properties of the layer stack.

: http://publica.fraunhofer.de/dokumente/N-12836.html