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High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers

: Möhrle, M.; Roehle, H.; Sigmund, A.; Suna, A.; Reier, F.

DOI: 10.1109/ICIPRM.2002.1014085

	IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society: IPRM, 14th Indium Phosphide and Related Materials Conference. Conference proceedings : May 12 - 16, 2002, Stockholm, Sweden Piscataway: IEEE Operations Center, 2002 ISBN: 0-7803-7320-0 S.27-30
	International Conference on Indium Phosphide and Related Materials (IPRM) <14, 2002, Stockholm>

	Englisch
	Konferenzbeitrag
	Fraunhofer HHI ()
	fabry-perot resonators; gallium arsenide; iii-v semiconductors; indium compounds; laser cavity resonators; optical fibre couplers; optical losses; semiconductor lasers; all-active tapered laser diodes; InGaAsP; bh-fp lasers; large spot-size; front facet cw output powers; operation current; high temperature behavior; coupling loss; cleaved single-mode fiber; 1550 nm; 400 micron; 40 mw; 200 ma; -3.5 db

Abstract
Large spot-size InGaAsP-BH-FP laser diodes using all-active tapered stripes have been investigated. Optimized 400 mu m long as-cleaved lasers show front facet CW output powers of more than 40 mW at 200 mA operation current, good high temperature behavior and a minimum coupling loss of -3.5 dB to a cleaved single-mode fiber.

: http://publica.fraunhofer.de/dokumente/N-12794.html