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2002
Conference Paper
Titel
1.3 mu m BH-FP laser with integrated monitor photodiode, 45 degrees reflector for bottom side emission employing full on-wafer fabrication
Abstract
We report on a 1.3 mu m FP-BH laser with monolithically integrated monitor photodiode and 45 degrees reflector for bottom side emission of the laser light. The devices are fabricated by employing a full on-wafer process including the formation of laser facets and the deposition of the high/antireflective coatings. Besides the possibility of on-wafer characterization, this device with its bottom side optical emission opens the way for the fabrication of low-cost optoelectronic modules based on semiconductor SMT-package technique.
Tags
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antireflection coatings
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fabry-perot resonators
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laser cavity resonators
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photodiodes
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semiconductor device packaging
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semiconductor lasers
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surface mount technology
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integrated monitor photodiode
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bottom side emission
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full on-wafer fabrication
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laser facets
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antireflective coatings
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low-cost optoelectronic modules
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smt-package technique
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1.3 micron