Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Low-temperature-grown 1.55 mu m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response

 
: Kuenzel, H.; Biermann, K.; Boettcher, J.; Harde, P.; Kurtzweg, M.; Schneider, R.; Neumann, W.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T.

:

IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
IPRM, 14th Indium Phosphide and Related Materials Conference. Conference proceedings : May 12 - 16, 2002, Stockholm, Sweden
Piscataway: IEEE Operations Center, 2002
ISBN: 0-7803-7320-0
S.343-346
International Conference on Indium Phosphide and Related Materials (IPRM) <14, 2002, Stockholm>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
aluminium compounds; annealing; beryllium; electro-optical modulation; electro-optical switches; electron traps; gallium arsenide; high-speed optical techniques; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; ultrahigh-speed optical switching devices; Be doped GaInAs/AlInAs MQWS; MBE grown; optical response; crystalline properties; carrier trapping properties; as-grown material; in-situ annealed material; substitutional incorporation; Be acceptors; excess As incorporation; Ga-sites blocking; cluster formation; femtosecond pump-probe experiments; nonlinear transmission change; fast modulation; accumulation effects; photonic device applications; 1.55 micron; 1.5 ps; 230 fs; GaInAs-AlInAs

Abstract
The crystalline and carrier trapping properties of 1.55 mu m emitting beryllium doped GaInAs/AlInAs multiple quantum wells, grown by MBE at low temperatures, were investigated with respect to their application to ultrahigh-speed optical switching devices. As-grown and in-situ annealed materials were compared. While the former material shows only limited substitutional incorporation of Be acceptors due to excess As incorporation blocking Ga-sites, annealed material shows cluster formation of excess As. Femtosecond pump-probe experiments indicate a nonlinear transmission change, which decays due to carrier trapping with a time constant of 230 fs. Experiments with pairs of ultrashort pulses separated by 1.5 ps demonstrate the capability of fast modulation of transmission associated with very small accumulation effects.

: http://publica.fraunhofer.de/dokumente/N-12791.html