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2002
Conference Paper
Titel
Low-temperature-grown 1.55 mu m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response
Abstract
The crystalline and carrier trapping properties of 1.55 mu m emitting beryllium doped GaInAs/AlInAs multiple quantum wells, grown by MBE at low temperatures, were investigated with respect to their application to ultrahigh-speed optical switching devices. As-grown and in-situ annealed materials were compared. While the former material shows only limited substitutional incorporation of Be acceptors due to excess As incorporation blocking Ga-sites, annealed material shows cluster formation of excess As. Femtosecond pump-probe experiments indicate a nonlinear transmission change, which decays due to carrier trapping with a time constant of 230 fs. Experiments with pairs of ultrashort pulses separated by 1.5 ps demonstrate the capability of fast modulation of transmission associated with very small accumulation effects.
Tags
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aluminium compounds
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annealing
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beryllium
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electro-optical modulation
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electro-optical switches
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electron traps
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gallium arsenide
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high-speed optical techniques
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iii-v semiconductors
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indium compounds
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molecular beam epitaxial growth
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semiconductor growth
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semiconductor quantum wells
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ultrahigh-speed optical switching devices
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Be doped GaInAs/AlInAs MQWS
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MBE grown
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optical response
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crystalline properties
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carrier trapping properties
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as-grown material
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in-situ annealed material
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substitutional incorporation
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Be acceptors
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excess As incorporation
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Ga-sites blocking
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cluster formation
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femtosecond pump-probe experiments
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nonlinear transmission change
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fast modulation
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accumulation effects
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photonic device applications
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1.55 micron
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1.5 ps
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230 fs
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GaInAs-AlInAs