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2002
Conference Paper
Titel
All-active InGaAsP/InP ring cavities for widespread functionalities in the wavelength domain
Abstract
All-active ring resonator structures allow filter operation as well as laser mode operation, only depending on the driving conditions. Add/drop filter devices based on active InGaAsP/InP have been realized for the 100 and 50 GHz free spectral range. The properties of all pass-filter elements built of active single ring resonators are investigated. A delay time up to 80 ps has been measured for a bending radius R of 250 mu m and a coupling ratio of 0.6 to the bus-waveguide. The respective dispersion of +or-280 ps/nm is attained within a pass band of 5 GHz. Operating in the laser mode, microring resonator structures with R = 50 mu m show a single mode emission spectrum with an optical power output as high as of 6.5 mW per facet.
Tags
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gallium arsenide
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gallium compounds
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iii-v semiconductors
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indium compounds
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laser cavity resonators
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optical communication equipment
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optical delay lines
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optical filters
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optical resonators
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ring lasers
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semiconductor lasers
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all-active ring resonator structures
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filter operation
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laser mode operation
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driving conditions
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add/drop filter devices
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InGaAsP/InP ring cavities
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all pass-filter elements
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adjustable wavelength filters
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microring resonator structures
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single mode emission spectrum
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100 GHz
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50 GHz
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80 ps
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5 GHz
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6.5 mw
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250 micron
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50 micron