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A simplified broad-band large-signal nonquasi-static table-based FET Model

Ein simplifiziertes nicht-quasistatisches tabellenbasiertes Breitband-Großsignal-FET-Modell
: Fernandez-Barciela, M.; Tasker, P.; Campos-Roca, Y.; Demmler, M.; Massler, H.; Sanchez, E.; Curras-Francos, M.C.; Schlechtweg, M.


IEEE transactions on microwave theory and techniques 48 (2000), Nr.3, S.395-405
ISSN: 0018-9480
Fraunhofer IAF ()
FET; modeling; Modell

In this paper, a simplified nonquasi-static table-based approach is developed for high-frequency broad-band large-signal field-effect-transistor modeling. As well as low-frequency dispersion, the quadratic frequency dependency of the y-parameters at high frequencies is taken into account through the use of linear delays. This model is suitable for applications related with nonlinear microwave computer-aided design and can be both easily extracted from dc and s-parameter measurements and implemented in commercially available simulation tools. Model formulation, small-signal, and large-signal validation will he described In this paper. Excellent results are obtained from dc up to the device f(T) frequencies, even when f(T) is as high as 100 GHz.