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GaN static induction transistor fabrication

Fabrikation eines statischen Induktionstransistor
 
: Weimann, G.; Eastman, L.F.; Obloh, H.; Köhler, K.

Ploog, K.H.; Tränkle, G.; Weimann, G.:
Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors : Berlin, Germany, 22 - 26 August 1999
Bristol: IOP Publishing, 2000 (Institute of Physics - Conference Series 166)
ISBN: 0-7503-0704-8
S.519-522
International Symposium on Compound Semiconductors (ISCS) <26, 1999, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
III-V semiconductors; III-V Halbleiter; wide bandgap heterostructures; Heterostruktur; breite Bandlücke; electrical properties; elektrische Eigenschaften

Abstract
We report on the design and development of a fully self-aligned manufacturing process for multifinger high-power GaN Static Induction Transistors, operating at X-band. A combined dry and wet etch process is used to fabricate the recessed gate structure. Hf-based ohmic contacts to (n)(+) GaN yield a specific contact resistance of less than (10)(-5) Ohm cm2 The leakage current of the Ni Schottky gates on the etched gate surface is measured to be less than 1 mA/mm.

: http://publica.fraunhofer.de/dokumente/N-1264.html