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Modeling and quantification of conventional and Coax-TSVs for RF applications

: Ndip, I.; Curran, B.; Guttowski, S.; Reichl, H.

International Microelectronics and Packaging Society -IMAPS-, Italian Chapter; Institute of Electrical and Electronics Engineers -IEEE-:
EMPC 2009, 17th European Microelectronics and Packaging Conference & Exhibition. CD-ROM : June 15th-18th, 2009 , Rimini, Italy
New York, NY: IEEE, 2009
ISBN: 0-615-29868-0
ISBN: 978-0-615-29868-9
ISBN: 978-1-4244-4722-0
European Microelectronics and Packaging Conference and Exhibition (EMPC) <17, 2009, Rimini>
Fraunhofer IZM ()

In this work we modeled and simulated Through Silicon Vias (TSV) in low, medium and high resistivity silicon (LRS, MRS and HRS) for frequencies up to 80 GHz. We then quantified the electromagnetic reliability (EMR) problems caused by conventional TSVs, in which silicon is used entirely as the medium for wave propagation. Our results revealed that using these conventional structures leads to high insertion loss, lack of impedance control, cross-talk and strong EMI. For example, for TSVs having a diameter 40 pm and depth of 200 pm, approximately 30 % of the power is lost through a conventional TSV in LRS at about 5 GHz if a SiO2 thickness of I pm is considered. We then proposed three different configurations of TSVs, based on the concept of the coaxial transmission line, namely Coax-TSV (SF), Coax-TSV (MDF) and Coax-TSV (LDF) to overcome all the limitations of conventional TSVs. This enables LRS to be used for the development of low-cost silicon-based system modules.