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Electrical resistivity calculations for copper nanointerconnect

 
: Zong, Z.X.; Mohammadzadeh, S.; Cao, Y.F.; Qiu, Z.J.; Liu, R.; Streiter, R.; Gessner, T.

:

Chevolleau, T.:
Materials for Advanced Metallization 2009 : Proceedings of the Eighteenth European Workshop on Materials for Advanced Metallization 2009, Grenoble, France, 08-11 March 2009
Amsterdam: Elsevier, 2010 (Microelectronic engineering 87.2010, Nr.3)
ISSN: 0167-9317
S.402-405
European Workshop on Materials for Advanced Metallization (MAM) <18, 2009, Grenoble>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer ENAS ()

Abstract
The size effect of copper interconnect in nanoscale based on various scattering mechanisms including surface roughness reflection, surface electron-phonon scattering, grain boundary and background scattering is studied theoretically using Monte Carlo method as a statistical solution to Boltzmann Transport Equation. Surface phonon dispersion and corresponding scattering probability are calculated from first principle calculations based on density functional perturbation theory. The performed simulation to investigate the influence of linewidth on resistivity shows a good agreement with published experimental results. A comparison of the resistivity behaviour of quasi elastic and inelastic surface model reveals surface electron-phonon scattering is an effective energy-loss channel of electrons.

: http://publica.fraunhofer.de/dokumente/N-125070.html