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Nonuniformity of electron density in In-rich InGaN films deduced from electrolyte capacitance-voltage profiling

: Knübel, A.; Polyakov, V.M.; Kirste, L.; Aidam, R.


Applied Physics Letters 96 (2010), Nr.8, Art. 082106, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()

InxGa1-xN films with 0.4<=x<=1 are analyzed using electrolyte-based capacitance-voltage technique. In-rich InxGa1-xN for x\'020.4 samples exhibit a strong surface electron accumulation. At x=0.4, the Fermi level at the surface is pinned to the conduction band edge indicating a crossover from surface accumulation to depletion. The measured Mott-Schottky plots are fitted using a model based on a Schrödinger-Poisson solver. By comparing the measured data to the fitting results, we conclude that a subsurface layer of \'0315 nm thickness with remarkably lower donor defect concentration is formed during the growth of InGaN films.