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The role of gated and ungated plasma in THz detection by field effect transistors

Die Rolle von gesteuertem und nicht gesteuertem Plasma bei der THz Detektion mittels Feldeffekt-Transistoren
 
: Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.

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Caldas, M. ; International Union of Pure and Applied Physics -IUPAP-:
Physics of Semiconductors. 29th International Conference on the Physics of Semiconductors, ICPS 2008 : Rio de Janeiro - Brazil, July 27-Aug 1, 2008
New York, N.Y.: AIP Press, 2009 (AIP Conference Proceedings 1199)
ISBN: 978-0-7354-0736-7
ISSN: 0094-243X
S.505-506
International Conference on the Physics of Semiconductors (ICPS) <29, 2008, Rio de Janeiro>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
Terahertz Spektroskopie; terahertz spectroscopy; III-V Halbleiter; III-V semiconductor; Heterostruktur; heterostructure

Abstract
We present experimental results of THz detection signal dependence on the magnetic field. THz radiation was detected with AlGaAs/GaAs high electron mobility transistor where 2D plasma excitations are responsible for the detection signal appearance. We observe both Shubnikov - de Haas oscillations and cyclotron resonance in the detection signal. Fourier transform analysis of the oscillations allowed us to observe two parts of the 2D electron gas: gated and ungated. This allows us to conclude that 2D electrons in the transistor channel are necessary for detection process and both gated and ungated parts takes part in that process.

: http://publica.fraunhofer.de/dokumente/N-122033.html