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High aspect ratio TSV copper filling with different seed layers

: Wolf, M.J.; Dretschkow, T.; Wunderle, B.; Jürgensen, N.; Engelmann, G.; Ehrmann, O.; Uhlig, A.; Michel, B.; Reichl, H.


IEEE Components, Packaging, and Manufacturing Technology Society; Electronic Components, Assemblies, and Materials Association:
58th Electronic Components and Technology Conference 2008. Proceedings. Vol.2 : Lake Buena Vista, FL, 27 - 30 May 2008
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-2230-2
Electronic Components and Technology Conference (ECTC) <58, 2008, Lake Buena Vista/Fla.>
Fraunhofer IZM ()

The paper addresses the through silicon via (TSV) filling using electrochemical deposition (ECD) of copper. The impact of seed layer nature on filling ratio and void formation will be discussed with respect to via diameter and via depth. Based on the Spherolyte Cu200 the electrolyte for the copper electrochemical deposition was modified for good filling behavior. Thermomechanical modeling and simulation was performed for reliability assessment.