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Application of test structures for monitoring of high frequency characteristics of Silicon up to 60GHz

 
: Salhi, F.; Riedl, W.; John, W.; Reichl, H.

:

European Microwave Association:
European Microwave Week 2005. CD-ROM : 35th European Microwave Conference 2005. European Conference on Wireless Technologies 2005. European Gallium Arsenide and other Compound Semiconductors Application Symposium. European Radar Conference
London: Horizon House, 2005
ISBN: 2-9600551-0-1
S.1179-1182
European Radar Conference (EuRad) <2005, Paris>
Englisch
Konferenzbeitrag
Fraunhofer IZM ()

Abstract
This paper summarizes test structures for continuous determination of electrical properties of material. On the basis of onchip technologie a silicon wafer with a resistivity of 500Ohm*cm is characterized. A method for determination of material properties in a frequency range of 4 GHz to at least 60 GHz is presented. Fundamental importance is attached to the relative permittivity and the dissipation factor. High frequency measurements are compared to simulation results. Finally, the extracted material parameters are presented and discussed.

: http://publica.fraunhofer.de/dokumente/N-119166.html