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Detailed analysis of annealing silver front side contacts on silicon solar cells

 
: Kontermann, S.; Grohe, A.; Preu, R.

:
Volltext urn:nbn:de:0011-n-1187921 (1.6 MByte PDF)
MD5 Fingerprint: ae758e3fd1522bbf8c1e6011dc3d0997
© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 10.11.2012


IEEE Electron Devices Society:
33rd IEEE Photovolatic Specialists Conference, PVSC 2008. Proceedings. Vol.4 : San Diego, CA, May 11 - 16, 2008
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-1640-0
ISBN: 978-1-4244-1641-7
ISBN: 1-4244-1640-X
S.1768-1771
Photovoltaic Specialists Conference (PVSC) <33, 2008, San Diego/Calif.>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Abstract
New concepts for high efficient solar cells require a post processing annealing step for passivation quality improvement. For cutting costs, thick film metallization is used for the front side. In this paper annealing steps of different duration and temperature are applied to standard industrial silicon solar cells to probe the sensitivity for such a front side metallization towards annealing. This paper focuses on five minute annealing under nitrogen atmosphere and determines favourable annealing temperatures and metallization pastes. In our investigations I-V curve measurements showed that from a certain threshold onwards, an increasing thermal budget decreases cell's performance. Series and contact resistance measurements were determined to be significantly affected by annealing. Scanning electron microscopy (SEM) revealed that silver crystallites at the silver silicon interface are transformed in shape for annealing at high temperatures which is most probable the microscopic reason for an increased contact resistance.

: http://publica.fraunhofer.de/dokumente/N-118792.html