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Honeycomb voids due to ion implantation in germanium

Honigwabenförmige Oberflächenstrukturen hervorgerufen durch die Implantation von Ionen in Germanium
: Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.

Preprint urn:nbn:de:0011-n-1180232 (541 KByte PDF)
MD5 Fingerprint: 861f4abd18cf5e76e030180658bbbdf4
Erstellt am: 30.9.2010

Thin solid films 518 (2010), Nr.9, S.2323-2325
ISSN: 0040-6090
Symposium I "Silicon and Germanium Issue for Future CMOS Devices" <2009, Strasbourg>
European Materials Research Society (Spring Meeting) <2009, Strasbourg>
Zeitschriftenaufsatz, Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
germanium; ion implantation; honeycomb voids

For future semiconductor devices, germanium layers are very attractive due to their high carrier mobility with ion implantation remaining the dominant method for forming pn junctions. Yet, implantation of heavy ions above a critical dose causes inadmissible surface roughness and formation of voids. To understand the main factors of influence, a comprehensive study on void formation was performed with different ions (BF2, P, Al, Ga, Ge, As, Sb) implanted at various doses, dose rates, and energies. It was found that the dose is the most important parameter for void formation. The critical dose was determined to be 2·1015 cm-2 for As, 2·1015 cm-2 for Ga, and 5·1014 cm-2 for Sb, respectively. For ions with lower mass (BF2, P, Al), no or only negligible surface roughening w as observed.