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Crystal growth of compound semiconductors with low dislocation densities

: Friedrich, J.; Kallinger, B.; Knoke, I.; Berwian, P.; Meissner, E.


IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
20th International Conference on Indium Phosphide and Related Materials, IPRM 2008 : 25-29 May 2008, Versailles, France
New York, NY: IEEE, 2008
ISBN: 978-1-4244-2258-6
6 S.
International Conference on Indium Phosphide and Related Materials (IPRM) <20, 2008, Versailles>
Fraunhofer IISB ()

This paper will highlight some technological developments in the field of Vertical Gradient Freeze growth of InP and GaAs for providing substrates with low dislocation densities. Furthermore, the role of micropipes and basal plane dislocations during sublimation and epitaxial growth of SiC will be addressed. Finally, different strategies will be illustrated to achieve GaN with high structural perfection.