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Simulation of dislocation density

Global modeling of bulk crystal growth by a quasi-steady approach of the Alexander-Haasen concept
: Bános, N.; Friedrich, J.; Müller, G.


Journal of Crystal Growth 310 (2008), Nr.2, S.501-507
ISSN: 0022-0248
Fraunhofer IISB ()

A global model for the simulation of dislocation density in the bulk growth of crystals is presented. The model is two-dimensional and quasi-steady; it is based on the original concept of Alexander and Haasen [Solid State Phys. 22 (1968) 27]. The model is validated by experimental results obtained from various growth techniques (LEC, VCz and VGF) with GaAs and InP crystals ranging up to diameters of 6".