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2008
Journal Article
Titel
Simulation of dislocation density
Titel Supplements
Global modeling of bulk crystal growth by a quasi-steady approach of the Alexander-Haasen concept
Abstract
A global model for the simulation of dislocation density in the bulk growth of crystals is presented. The model is two-dimensional and quasi-steady; it is based on the original concept of Alexander and Haasen [Solid State Phys. 22 (1968) 27]. The model is validated by experimental results obtained from various growth techniques (LEC, VCz and VGF) with GaAs and InP crystals ranging up to diameters of 6".