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Comparison of bonding kinetics for borosilicate glass and silicon wafers by in situ fracture surface energy measurements during annealing

 
: Eichler, M.; Michel, B.; Hennecke, P.; Klages, C.-P.

Knechtel, R.:
WaferBond 2009, Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration : 6th - 8th December 2009, Grenoble, France ; [WaferBond '09]
Grenoble, 2009
S.15-16
Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration <2009, Grenoble>
Englisch
Konferenzbeitrag
Fraunhofer IST ()

Abstract
This paper presents the results of surface energy y measurements performed in situ during annealing for direct bonding. First results concerning thy y(t) behavior for atmospheric pressure plasma pre- treatments of silicon wafers compared to Borofloat glass wafers will be presented.

: http://publica.fraunhofer.de/dokumente/N-116244.html