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Micro-photoluminescence spectroscopy on metal precipitates in silicon

: Gundel, P.; Schubert, M.C.; Kwapil, W.; Schon, J.; Reiche, M.; Savin, H.; Yli-Koski, M.; Sans, J.A.; Martinez-Criado, G.; Seifert, W.; Warta, W.; Weber, E.R.


Physica status solidi. Rapid research letters 3 (2009), Nr.7-8, S.230-232
ISSN: 1862-6254
ISSN: 1862-6270
Fraunhofer ISE ()

Metallic impurities are detrimental to many silicon devices and limit the efficiency of multi crystalline silicon solar cells. Therefore they are a major subject of ongoing research. Photoluminescence spectroscopy is a promising technique for detecting precipitated metals in silicon because of its sensitivity to the minority carrier density and to specific types of defects; however the impact of impurities on the defect luminescence could not be clarified yet. In this letter we examine the role of micron-sized iron and copper precipitates in direct bonded wafers by micro-photoluminescence spectroscopy. Both kinds of precipitates are detectable by means of the reduced band-to-band luminescence. An element-specific effect on the defect luminescence is observed. The results are confirmed by X-ray fluorescence spectroscopy.