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Formation of InAs/InGaAsP quantum-dashes on InP(001)

: Lenz, A.; Genz, F.; Eisele, H.; Ivanova, L.; Timm, R.; Franke, D.; Künzel, H.; Pohl, U.W.; Dähne, M.


Applied Physics Letters 95 (2009), Nr.20, Art. 203105
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer HHI ()

Self-assembled InAs/InGaAsP/InP(001) nanostructures are investigated using cross-sectional scanning tunneling microscopy. Atomically resolved images at both the (110) and the (110) cleavage surface show InAs quantum dashes with almost binary composition and a truncated pyramidal shape. The quaternary matrix material directly above the InP substrate already shows a tendency toward decomposition, which gradually increases along the [001] growth direction, in particular above quantum dash layers. This decomposition, in turn, leads to an enhanced vertical correlation in the nucleation of further quantum dash layers.