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Continuous-wave, room-temperature operation of 2-µm Sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates

: Rotter, T.J.; Tatebayashi, J.; Senanayake, P.; Balakrishnan, G.; Rattunde, M.; Wagner, J.; Hader, J.; Moloney, J.V.; Koch, S.W.; Dawson, L.R.; Huffaker, D.L.


Applied physics express 2 (2009), Nr.11, Art. 112102, 3 S.
ISSN: 1882-0778
ISSN: 1882-0786
Fraunhofer IAF ()

We report on continuous-wave, room-temperature operation at 2.014 mu m of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90 degrees misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5 degrees C.