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(AlGaIn)N ultraviolet LED chips and their use in tri-phosphor luminescence conversion white LEDs

(AlGaIn)N UV-LED Chips und ihr Einsatz in weißen Dreibanden-Lumineszenzkonversions-LEDs
: Wagner, J.; Kaufmann, U.; Köhler, K.; Kunzer, M.; Pletschen, W.; Obloh, H.; Schlotter, P.; Stephan, T.; Walcher, H.; Ellens, A.; Rossner, W.; Kobusch, M.


Schubert, E.F.:
Light-emitting diodes. Research, manufacturing and applications VI : held during SPIE's Photonics West Meeting, 22 - 24 January 2002, San Jose, USA
Bellingham/Wash.: SPIE, 2002 (Proceedings of SPIE 4641)
ISBN: 0-8194-4380-8
Photonics West Conference <2002, San Jose/Calif.>
Fraunhofer IAF ()
(AlGaIn)N; light emitting diode; Leuchtdiode; luminescence conversion; Lumineszenzkonversion

We report on the development of (AlGaIn)N quantum well LEDs covering the 380 to 430 nm wavelength range, which serve as the primary light source for tri-phosphor luminescence conversion white LEDs. Epitaxial layer growth was performed by low-pressure metal-organic chemical vapor deposition on sapphire substrates. Mesa LEDs were fabricated and either mounted in standard epoxy-based 5 mm radial LED packages or flip-chip bonded on ceramic submounts. Then, LED-chips with peak wavelengths matching the absorption spectrum of an appropriately chosen inorganic tri-phosphor blend, were used for the fabrication of single-chip tri-color luminescence conversion white LEDs. These devices allowed us to demonstrate the feasibility of the above concept for improved color rendering and tunability.