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Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

: Saint-Cast, P.; Kania, D.; Hofmann, M.; Benick, J.; Rentsch, J.; Preu, R.


Applied Physics Letters 95 (2009), Nr.15, Art. 151502, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Photovoltaische Module und Kraftwerke; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Modulcharakterisierung; Modulprüfung; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

Aluminum oxide layers can provide excellent passivation for lowly and highly doped p-type silicon surfaces. Fixed negative charges induce an accumulation layer at the p-type silicon interface, resulting in very effective field-effect passivation. This paper presents highly negatively charged (Q(ox)=-2.1 X 10(12) cm(-2)) aluminum oxide layers produced using an inline plasma-enhanced chemical vapor deposition system, leading to very low effective recombination velocities (similar to 10 cm s(-1)) on low-resistivity p-type substrates. A minimum static deposition rate (100 nm min(-1)) at least one order of magnitude higher than atomic layer deposition was achieved on a large carrier surfaces (similar to 1 m(2)) without significantly reducing the resultant passivation quality.