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Barrier inhomogeneities of tungsten Schotty diodes on 4H-SiC

Barriereinhomogenitäten bei Wolfram-Schottky-Dioden auf 4H-SiC
: Hamida, A.F.; Ouennoughi, Z.; Sellai, A.; Weiss, R.; Ryssel, H.


Semiconductor Science and Technology 23 (2008), Nr.4, Art. 045005, 6 S.
ISSN: 0268-1242
ISSN: 1361-6641
Fraunhofer IISB ()

Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis of the forward currentvoltage (IV) characteristics measured at elevated temperatures within the range of 303-448 K. The subsequently derived Schottky barrier heights (SBHs) and ideality factors are found to be temperature dependent with distributions that are adequately explained within the framework of the model proposed by Tung in which he considers the barrier at a metalsemiconductor interface as consisting of locally non-uniform but interacting patches of different barrier heights embedded in a background of uniform barrier height. A uniform barrier height of 1.248 eV, a Richardson's constant of 129.95 A cm-2K2 and a factor To of 23.92 K obtained agree very well with values published previously for similar Schottky barrier systems. Therefore, it has been concluded that the temperature-dependent IV characteristics of the device can be successfully explained with lateral inhomogeneities distribution of the SBH. Print publication: Issue 4 (April 2008)