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InAs/GaSb superlattices for advanced infrared focal plane arrays

: Rehm, R.; Walther, M.; Schmitz, J.; Rutz, F.; Fleißner, J.; Scheibner, R.; Ziegler, J.


Infrared physics and technology 52 (2009), Nr.6, S.344-347
ISSN: 1350-4495
International Conference on Quantum Structure Infrared Photodetectors (QSIP) <2009, Yosemite/Calif.>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
InAs/GaSb superlattice; quantum efficiency; infrared focal plane array; MWIR; dual-color; carbon dioxide

We report on the development of high performance focal plane arrays for the mid-wavelength infrared spectral range from 3-5 lm (MWIR) on the basis of InAs/GaSb superlattice photodiodes. An investigation on the minority electron diffusion length with a set of six sample ranging from 190 to 1000 superlattice periods confirms that InAs/GaSb superlattice focal plane arrays achieve very high external quantum efficiency. This enabled the fabrication of a range of monospectral MWIR imagers with high spatial and excellent thermal resolution at short integration times. Furthermore, novel dual-color imagers have been developed, which offer advanced functionality due to a simultaneous, pixel-registered detection of two separate spectral channels in the MWIR.