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High-performance MMICs and high-speed mixed-signal ICs based on III/V HEMT and HBT technology for sensors and communication

: Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Massler, H.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.; Kuri, M.

Semiconductor Conference 2009. CD-ROM : Chip, Packaging, Design, Simulation and Test; International Conference, Workshop and Table-top Exhibition
Martinsried: Gerotron Communication, 2009
6 S.
Semiconductor Conference <2009, Dresden>
Fraunhofer IAF ()
HEMT; mixed signal IC

Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic integrated circuits (MMICs) and modules for application in active and passive high-resolution imaging systems operating beyond 200 GHz as well as mixed-signal ICs intended for use in 100 Gbit/s optical communication systems (Ethernet) has been developed at Fraunhofer IAF. The MMICs have been fabricated using an advanced metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). The mixed-signal ICs have been manufactured using a state-of-the-art InP double heterojunction bipolar transistor (DHBT) technology. This paper presents circuits from both technologies showing very promising performance.