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High in content GaInAsN on InP: Composition dependent band gap energy and luminescence properties

GaInAsN mit hohem In-Gehalt auf InP: kompositionsabhängige Bandlückenenergie und Lumineszenzeigenschaften
: Serries, D.; Geppert, T.; Ganser, P.; Köhler, K.; Wagner, J.

IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
IPRM, 14th Indium Phosphide and Related Materials Conference. Conference proceedings : May 12 - 16, 2002, Stockholm, Sweden
Piscataway: IEEE Operations Center, 2002
ISBN: 0-7803-7320-0
International Conference on Indium Phosphide and Related Materials (IPRM) <14, 2002, Stockholm>
Fraunhofer IAF ()

Quaternary pseudomorphically strained Ga(1-x)In(x)As(1-y)N(y) films and double quantum wells (0.53 <= x <= 0.70, 0<= y <= 0.024) were grown by plasma assisted molecular beam epitaxy on InP substrates. A reduction of compressive strain and a low-energy shift of photoluminescence (PL) peak position was observed with increasing N concentration. The deterioration of the PL properties in terms of reduced peak intensity and increased linewidth with increasing N incorporation can be partially compensated by rapid thermal annealing, which is accompanied by a blue-shift with respect to the as-grown samples. From the measured PL peak energies of the as-grown samples the net effect of N incorporation on the GaInAsN bandgap energy was deduced. The band anticrossing model was fitted to the obtained composition dependent GaInAsN bandgap energy resulting in values for the interaction parameter C(MN) for high In content GaInAsN which are only slightly smaller than that reported for low In content GaInAsN on GaAs.