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Capacitive coupled TLP (CC-TLP) and the correlation with the CDM

 
: Wolf, H.; Gieser, H.; Bock, K.; Duvvury, C.; Jahanzeb, A.; Lin, Y.-Y.

EOS/ESD Association Inc., Rome/N.Y.; Institute of Electrical and Electronics Engineers -IEEE-:
Electrical Overstress/Electrostatic Discharge Symposium 2009. Proceedings : Anaheim, California, USA, August 30 - September 4, 2009
Rome, NY: ESD Association, 2009
ISBN: 1-585-37175-0
ISBN: 978-1-58537-176-1
S.135-142
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) <31, 2009, Anaheim/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IZM ()

Abstract
Capacitive Coupled Transmission Line Pulsing (CC-TLP) has successfully identified a known CDM weakness at the RF inputs of two different 90 nm CMOS RF products. The presented study compares electrical and physical failure signatures for packaged devices and even for devices stressed at wafer level. The peak stress currents resulting in a failure as well as the failure signatures correlate very well for CDM and CC-TLP. The results also support the application of a single stress per pin with the potential to save many hours of test time without loosing confidence.

: http://publica.fraunhofer.de/dokumente/N-108841.html