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InP-based DHBT technology for high-speed mixed signal and digital applications

: Driad, R.; Makon, R.E.; Hurm, V.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Schlechtweg, M.


IEEE Photonics Society:
IPRM 2009, IEEE International Conference on Indium Phosphide & Related Materials. Proceedings : Newport Beach, CA, USA, 10-14 May 2009
Piscataway, NJ: IEEE, 2009
ISBN: 1-4244-3432-7
ISBN: 978-1-4244-3432-9
ISBN: 978-1-4244-3433-6
International Conference on Indium Phosphide and Related Materials (IPRM) <21, 2009, Newport Beach/Calif.>
Fraunhofer IAF ()

We report on an InP DHBT-based technology featuring current gains of ~ 90, breakdown voltages of > 4.5 V and cut-off frequency (fT) values of > 300 GHz. Using this technology, state-of-the-art mixed signal integrated circuits, including distributed amplifiers (DAs), multiplexers (MUX) / demultiplexers (DEMUX), and clock and data recovery (CDR) ICs suitable for 100+ Gbit/s applications have been demonstrated. The DA-MMICs achieved gains of ~ 21 dB, 3-dB bandwidths of ges 95 GHz (gain-bandwidth-products > 1 THz), as well as output voltages of up to 3 V at 100 Gbit/s. A monolithically integrated CDR/1:2 DEMUX IC has also successfully been tested at data rates of up to 107 Gbit/s.