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Advanced mHEMT MMICs for 220 GHz high-resolution imaging systems

: Chartier, S.; Tessmann, A.; Leuther, A.; Weber, R.; Kallfass, I.; Schlechtweg, M.; Stanko, S.; Essen, H.; Ambacher, O.


Walther, M.:
Papers presented at the 35th International Symposium on Compound Semiconductors, ISCS 2008 : Rust, Germany, 21 - 24 September 2008
Weinheim: Wiley-VCH, 2009 (Physica status solidi. C, Current topics in solid state physics 6.2009, Nr.6)
International Symposium on Compound Semiconductors (ISCS) <35, 2008, Rust>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IAF ()
Fraunhofer FHR

The development of advanced millimeter-wave monolithic integrated circuits for application in active and passive high-resolution imaging systems operating beyond 200 GHz is presented. A wideband 210 GHz Low Noise Amplifier has been successfully realized using one of our three metamorphic high electron mobility transistor (mHEMT) technologies in combination with grounded coplanar circuit topology (GCPW). Additionally, a 200 GHz voltage controlled oscillator (VCO) MMIC demonstrating good output power over a wide bandwidth was fabricated, using our 100 nm mHEMT technology. Finally, a high resolution 220 GHz radiometer was realized and shows very promising performance.