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Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range

: Rattunde, M.; Rösener, B.; Hempler, N.; Hopkins, J.-M.; Burns, D.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.


Institute of Electrical and Electronics Engineers -IEEE-:
European Conference on Lasers & Electro-Optics and the 11th European Quantum Electronics Conference, CLEO Europe - EQEC 2009 : 14 - 19 June 2009, Munich
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-4079-5
ISBN: 978-1-4244-4080-1
1 S.
European Conference on Lasers & Electro-Optics (CLEO Europe) <2009, München>
European Quantum Electronics Conference (EQEC) <11, 2009, München>
Fraunhofer IAF ()

In this paper, we will present our results on different high-power GaSb- based optically pumped semiconductor disk lasers (OPSDLs) emitting in the 1.9-2.8 µm wavelength range, with the emphasis on the power scaling capability of these long-wavelength laser by using the following different concepts: increasing the pumped area, using multiple gain chips and using in-well pumped structures.