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Resonant in-well pumping of GaSb-based VECSELs emitting in the 2.X µm wavelength regime

: Schulz, N.; Rattunde, M.; Manz, C.; Kohler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.


Optical Society of America -OSA-, Washington/D.C.:
2007 Conference on Lasers and Electro-Optics, CLEO '07. Conference papers : Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies. Baltimore, Maryland, May 6 - 11, 2007
Washington, DC: OSA, 2007 (OSA Technical digest series)
ISBN: 1-557-52834-9
ISBN: 978-1-4244-3590-6
Conference on Lasers and Electro-Optics (CLEO) <2007, Baltimore/Md.>
Fraunhofer IAF ()

We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35 mu m optimized for resonant optical in-well pumping around 1.95 mu m. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.