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Characterization of GaAs(1-x) Bi(x) Epilayers by Raman Scattering and X-ray Diffraction

 

Czech Academy of Sciences, Institute of Physics:
European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques 1999. EW MOVPE VIII. Workshop proceedings
Prag, 1999
S.249-252
European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques <8, 1999, Prag>
Englisch
Konferenzbeitrag
Fraunhofer IZFP ()
raman scattering; GaAs substrat

Abstract
For the first time, the Raman spectra of GaAs1-xBix, mixed crystal layers have been analysed at different temperatures in dependence on the molar fraction x. A two-mode behavior well-known from other ternary III-V single crystals have been observed and the GaBi-related 1LO phonon-like mode identified at about 190 cm-1 (77k) and 184 cm-1 (300K). A strong first order mode showing a pronounced temperature dependence has been interpreted as GaAs-related coupled 1LO-phonon-plasmon mode L. Nevertheless, a better understanding of the Raman spectra of the GaAs1-xBix system, in particular of modes found between the main phonon branches, is expected from the comparison with Raman results obtained analogously on InAs1-xBix epilayers. Both the weak second order phonon spectra and the X-ray rocking curves indicate that it is possible to grow layers of a good crystal quality ba MOVPE.

: http://publica.fraunhofer.de/dokumente/N-1060.html